IndiumV3, Main, Repository, bibRecord, 000D13

Fabrication of GaN structures with embedded network of voids using pillar patterned GaN templates

Identifieur interne : 000D13 ( Main/Repository ); précédent : 000D12; suivant : 000D14

Fabrication of GaN structures with embedded network of voids using pillar patterned GaN templates

Auteurs : RBID : Pascal:13-0201165

Descripteurs français

Pascal (Inist)
- Semiconducteur III-V, Composé III-V, Cavité dans réseau, Défaut cristallin, Structure à pilier, Réaction dirigée, Méthode MOCVD, Mécanisme croissance, Puits quantique, Nanomatériau, Interface, Couche épitaxique, Dislocation filetée, Densité dislocation, Nitrure de gallium, Nitrure d'indium, Photoluminescence, Rendement quantique, Diffusion lumière, Gravure, Epitaxie, GaN, InGaN, Substrat GaN, Substrat saphir, 8115G, 8110A, 8107, 6172L.

English descriptors

KwdEn :
- Crystal defects, Dislocation density, Epitaxial layers, Epitaxy, Etching, Gallium nitride, Growth mechanism, III-V compound, III-V semiconductors, Indium nitride, Interfaces, Light scattering, MOCVD, Nanostructured materials, Photoluminescence, Pillared structure, Quantum wells, Quantum yield, Template reaction, Threading dislocation, Voids.

Abstract

In this paper we report on the MOCVD growth and characterization of GaN structures and InGaN single quantum wells grown on pillar patterned GaN/sapphire templates. During the regrowth a network of voids was intentionally formed at the interface of sapphire substrate and GaN epitaxial layer. The regrowth process was found to decrease the threading dislocation density of the overgrown layer. The quantum well sample grown on patterned template showed significantly higher optical output in photoluminescence measurements compared to the reference sample with identical internal quantum efficiency characteristics. We attribute the increase to enhanced light extraction efficiency caused by strong scattering and redirection of light from the scattering elements.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 000C87

Links to Exploration step

Pascal:13-0201165

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Fabrication of GaN structures with embedded network of voids using pillar patterned GaN templates</title>
<author><name sortKey="Svensk, O" uniqKey="Svensk O">O. Svensk</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Aalto University, School of Electrical Engineering, Department of Micro and Nanosciences, Tietotie 3</s1>
<s2>02150 Espoo</s2>
<s3>FIN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Finlande</country>
<wicri:noRegion>02150 Espoo</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Ali, M" uniqKey="Ali M">M. Ali</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Aalto University, School of Electrical Engineering, Department of Micro and Nanosciences, Tietotie 3</s1>
<s2>02150 Espoo</s2>
<s3>FIN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Finlande</country>
<wicri:noRegion>02150 Espoo</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Riuttanen, L" uniqKey="Riuttanen L">L. Riuttanen</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Aalto University, School of Electrical Engineering, Department of Micro and Nanosciences, Tietotie 3</s1>
<s2>02150 Espoo</s2>
<s3>FIN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Finlande</country>
<wicri:noRegion>02150 Espoo</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Torm, P T" uniqKey="Torm P">P. T. Törm</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Aalto University, School of Electrical Engineering, Department of Micro and Nanosciences, Tietotie 3</s1>
<s2>02150 Espoo</s2>
<s3>FIN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Finlande</country>
<wicri:noRegion>02150 Espoo</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Sintonen, S" uniqKey="Sintonen S">S. Sintonen</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Aalto University, School of Electrical Engineering, Department of Micro and Nanosciences, Tietotie 3</s1>
<s2>02150 Espoo</s2>
<s3>FIN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Finlande</country>
<wicri:noRegion>02150 Espoo</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Suihkonen, S" uniqKey="Suihkonen S">S. Suihkonen</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Aalto University, School of Electrical Engineering, Department of Micro and Nanosciences, Tietotie 3</s1>
<s2>02150 Espoo</s2>
<s3>FIN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Finlande</country>
<wicri:noRegion>02150 Espoo</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Sopanen, M" uniqKey="Sopanen M">M. Sopanen</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Aalto University, School of Electrical Engineering, Department of Micro and Nanosciences, Tietotie 3</s1>
<s2>02150 Espoo</s2>
<s3>FIN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Finlande</country>
<wicri:noRegion>02150 Espoo</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Lipsanen, H" uniqKey="Lipsanen H">H. Lipsanen</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Aalto University, School of Electrical Engineering, Department of Micro and Nanosciences, Tietotie 3</s1>
<s2>02150 Espoo</s2>
<s3>FIN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Finlande</country>
<wicri:noRegion>02150 Espoo</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0201165</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0201165 INIST</idno>
<idno type="RBID">Pascal:13-0201165</idno>
<idno type="wicri:Area/Main/Corpus">000C87</idno>
<idno type="wicri:Area/Main/Repository">000D13</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystal defects</term>
<term>Dislocation density</term>
<term>Epitaxial layers</term>
<term>Epitaxy</term>
<term>Etching</term>
<term>Gallium nitride</term>
<term>Growth mechanism</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium nitride</term>
<term>Interfaces</term>
<term>Light scattering</term>
<term>MOCVD</term>
<term>Nanostructured materials</term>
<term>Photoluminescence</term>
<term>Pillared structure</term>
<term>Quantum wells</term>
<term>Quantum yield</term>
<term>Template reaction</term>
<term>Threading dislocation</term>
<term>Voids</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Cavité dans réseau</term>
<term>Défaut cristallin</term>
<term>Structure à pilier</term>
<term>Réaction dirigée</term>
<term>Méthode MOCVD</term>
<term>Mécanisme croissance</term>
<term>Puits quantique</term>
<term>Nanomatériau</term>
<term>Interface</term>
<term>Couche épitaxique</term>
<term>Dislocation filetée</term>
<term>Densité dislocation</term>
<term>Nitrure de gallium</term>
<term>Nitrure d'indium</term>
<term>Photoluminescence</term>
<term>Rendement quantique</term>
<term>Diffusion lumière</term>
<term>Gravure</term>
<term>Epitaxie</term>
<term>GaN</term>
<term>InGaN</term>
<term>Substrat GaN</term>
<term>Substrat saphir</term>
<term>8115G</term>
<term>8110A</term>
<term>8107</term>
<term>6172L</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">In this paper we report on the MOCVD growth and characterization of GaN structures and InGaN single quantum wells grown on pillar patterned GaN/sapphire templates. During the regrowth a network of voids was intentionally formed at the interface of sapphire substrate and GaN epitaxial layer. The regrowth process was found to decrease the threading dislocation density of the overgrown layer. The quantum well sample grown on patterned template showed significantly higher optical output in photoluminescence measurements compared to the reference sample with identical internal quantum efficiency characteristics. We attribute the increase to enhanced light extraction efficiency caused by strong scattering and redirection of light from the scattering elements.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0>
</fA01>
<fA02 i1="01"><s0>JCRGAE</s0>
</fA02>
<fA03 i2="1"><s0>J. cryst. growth</s0>
</fA03>
<fA05><s2>370</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>Fabrication of GaN structures with embedded network of voids using pillar patterned GaN templates</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>16th International Conference on Metalorganic Vapor Phase Epitaxy</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>SVENSK (O.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>ALI (M.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>RIUTTANEN (L.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>TÖRMÄ (P. T.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>SINTONEN (S.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>SUIHKONEN (S.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>SOPANEN (M.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>LIPSANEN (H.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>JONG KYU KIM</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>KUECH (Thomas F.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>CANEAU (Catherine)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="04" i2="1"><s1>REDWING (Joan M.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="05" i2="1"><s1>DADGAR (Armin)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Aalto University, School of Electrical Engineering, Department of Micro and Nanosciences, Tietotie 3</s1>
<s2>02150 Espoo</s2>
<s3>FIN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</fA14>
<fA20><s1>42-45</s1>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13507</s2>
<s5>354000500688410090</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>24 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0201165</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>In this paper we report on the MOCVD growth and characterization of GaN structures and InGaN single quantum wells grown on pillar patterned GaN/sapphire templates. During the regrowth a network of voids was intentionally formed at the interface of sapphire substrate and GaN epitaxial layer. The regrowth process was found to decrease the threading dislocation density of the overgrown layer. The quantum well sample grown on patterned template showed significantly higher optical output in photoluminescence measurements compared to the reference sample with identical internal quantum efficiency characteristics. We attribute the increase to enhanced light extraction efficiency caused by strong scattering and redirection of light from the scattering elements.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A15G</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A10A</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A07Z</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B60A72L</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Cavité dans réseau</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Voids</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Défaut cristallin</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Crystal defects</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Structure à pilier</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Pillared structure</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Estructura con pilares</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Réaction dirigée</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Template reaction</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Reacción dirigida</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Méthode MOCVD</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>MOCVD</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Mécanisme croissance</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Growth mechanism</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Puits quantique</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Quantum wells</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Nanomatériau</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Nanostructured materials</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Interface</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Interfaces</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Couche épitaxique</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Epitaxial layers</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Dislocation filetée</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Threading dislocation</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Dislocación aterrajada</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Densité dislocation</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Dislocation density</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Nitrure de gallium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Gallium nitride</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Galio nitruro</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Nitrure d'indium</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Indium nitride</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Indio nitruro</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>29</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>29</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Rendement quantique</s0>
<s5>30</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Quantum yield</s0>
<s5>30</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Diffusion lumière</s0>
<s5>31</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Light scattering</s0>
<s5>31</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Gravure</s0>
<s5>32</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Etching</s0>
<s5>32</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Epitaxie</s0>
<s5>33</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Epitaxy</s0>
<s5>33</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>GaN</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>InGaN</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>Substrat GaN</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>Substrat saphir</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>8115G</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>8110A</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="28" i2="3" l="FRE"><s0>8107</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="29" i2="3" l="FRE"><s0>6172L</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>182</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>ICMOVPE-XVI International Conference on Metalorganic Vapor Phase Epitaxy</s1>
<s2>16</s2>
<s3>Busan KOR</s3>
<s4>2012-05-20</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000D13 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 000D13 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:13-0201165
   |texte=   Fabrication of GaN structures with embedded network of voids using pillar patterned GaN templates
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Fabrication of GaN structures with embedded network of voids using pillar patterned GaN templates

Fabrication of GaN structures with embedded network of voids using pillar patterned GaN templates

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri